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Effect of the CoZr/Cu interface quality on the magnetoresistance behavior in a spin-valve sandwich (CoZr/Cu/Co)

Identifieur interne : 000147 ( Maroc/Analysis ); précédent : 000146; suivant : 000148

Effect of the CoZr/Cu interface quality on the magnetoresistance behavior in a spin-valve sandwich (CoZr/Cu/Co)

Auteurs : M. El Harfaoui [Maroc] ; M. Faris [Maroc] ; A. Qachaou [Maroc] ; J. Ben Youssef [France] ; H. Le Gall [France] ; D. Meziane Mtalsi [Maroc]

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RBID : Pascal:01-0072384

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English descriptors

Abstract

The magnetoresistance (MR) and the saturation resistivity (ρs) are investigated at 300K in [Co98Zr2(tCoZr(A))/ Cu(28 Å)/Co(25 Å)] thin films grown by RF diode sputtering. The highest value of transverse MR is obtained along the easy axis and the MR curve was saturated in a magnetic field of 100 Oe at room temperature. X-ray diffraction measurements (XRD) at low angles point out clearly the important interfacial roughness increase observed in magnetic structures with CoZr magnetic layers compared to (Co/Cu) basic multilayers. The MR behavior versus the CoZr magnetic layer thickness (tCoZr) exhibits a maximum (3.6%) at tCoZr = 30A, over which a significant decrease is observed. ρs decreases with increasing tCoZr up to 30 A, and increases with increasing thickness toward the value of the measured CoZr thicker layer ( 40 μΩcm). The representation of the CoZrCu interface by a mixed zone in the Johnson-Camley semi-classical model reproduces well the experimental results of MR and ρs versus tCoZr, confirming thus the important role of interface quality on the electronic transport properties.


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<title xml:lang="en" level="a">Effect of the CoZr/Cu interface quality on the magnetoresistance behavior in a spin-valve sandwich (CoZr/Cu/Co)</title>
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<term>Cobalt</term>
<term>Cobalt base alloys</term>
<term>Copper</term>
<term>Experimental study</term>
<term>Giant magnetoresistance</term>
<term>Interfaces</term>
<term>Interfacial layer</term>
<term>Magnetic field effects</term>
<term>Magnetization</term>
<term>Multilayers</term>
<term>Roughness</term>
<term>Sandwich structures</term>
<term>Small angle scattering</term>
<term>Thickness</term>
<term>Thin films</term>
<term>XRD</term>
<term>Zirconium alloys</term>
</keywords>
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<term>Magnétorésistance géante</term>
<term>Effet champ magnétique</term>
<term>Diffraction RX</term>
<term>Rugosité</term>
<term>Interface</term>
<term>Epaisseur</term>
<term>Diffusion petit angle</term>
<term>Aimantation</term>
<term>Couche interfaciale</term>
<term>Multicouche</term>
<term>Couche mince</term>
<term>Structure sandwich</term>
<term>Cuivre</term>
<term>Cobalt</term>
<term>Alliage base cobalt</term>
<term>Zirconium alliage</term>
<term>Etude expérimentale</term>
<term>Alliage Co97Zr3</term>
<term>Co Zr</term>
<term>Cu</term>
<term>Co</term>
<term>7570P</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr">
<term>Cuivre</term>
<term>Cobalt</term>
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<div type="abstract" xml:lang="en">The magnetoresistance (MR) and the saturation resistivity (ρ
<sub>s</sub>
) are investigated at 300K in [Co
<sub>98</sub>
Zr
<sub>2</sub>
(t
<sub>CoZr</sub>
(A))/ Cu(28 Å)/Co(25 Å)] thin films grown by RF diode sputtering. The highest value of transverse MR is obtained along the easy axis and the MR curve was saturated in a magnetic field of 100 Oe at room temperature. X-ray diffraction measurements (XRD) at low angles point out clearly the important interfacial roughness increase observed in magnetic structures with CoZr magnetic layers compared to (Co/Cu) basic multilayers. The MR behavior versus the CoZr magnetic layer thickness (t
<sub>CoZr</sub>
) exhibits a maximum (3.6%) at t
<sub>CoZr</sub>
= 30A, over which a significant decrease is observed. ρ
<sub>s</sub>
decreases with increasing t
<sub>CoZr</sub>
up to 30 A, and increases with increasing thickness toward the value of the measured CoZr thicker layer ( 40 μΩcm). The representation of the CoZrCu interface by a mixed zone in the Johnson-Camley semi-classical model reproduces well the experimental results of MR and ρ
<sub>s</sub>
versus t
<sub>CoZr</sub>
, confirming thus the important role of interface quality on the electronic transport properties.</div>
</front>
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